Search results for "réactivité interfaciale"
showing 2 items of 2 documents
Initial stages of metal oxides thin films growth by MOCVD: physicochemical characterisation of the film/substrate interface
2006
The initial stages of Metalorganic Chemical Vapour Deposition (MOCVD) of TiO2 thin films on Si(100) were studied in situ by surface analyses (XPS, ARXPS, AES). An original experimental set-up was built for this purpose and developed. Information obtained from these in situ experiments was completed by ex situ characterisations (HRTEM, SIMS, GIXRD...).The formation of an interfacial SiOy<2 layer resulting of the interaction of the precursor Ti(OCH(CH3)2)4 with the substrate takes place before the formation of stoichiometric TiO2 and leads to the presence of carbon at the interface. At the deposition temperature, 675 °C, silicon diffusion within the TiO2 external layer was also revealed. Conc…
Fabrication and characterization of barium silicate ultrathin films as an alternative gate oxide
2008
Down-scaling of elementary CMOS elements requires the replacement of SiO2 as a gate oxide. By the identification of the formation conditions of barium silicate in direct contact of a silicon substrate, this study revealed a potential candidate. First of all, a reaction between Ba and SiO2 leading to the formation of barium silicate as been evidenced by in-situ XPS and SR-PES analyses. Then, barium silicate films have been elaborated by oxygen and barium co-deposition at 580 °C. Thermal treatments under vacuum showed that barium silicate was thermally stable up to 900 °C. TEM and SIMS ex-situ analyses revealed a sharp interface with the substrate. Finally, an experimental setup dedicated to …